Directors

  • Steven Ringel

    • Executive Director - IMR, OR - Inst for Material Res
    • Professor, Neal A Smith Chair, Electrical & Computer Engr.
    • Professor, Materials Science Engineering
    • Professor, Physics

    614-292-6904

Staff

Graduate Researchers

Visiting Scholars

    Undergraduate Researchers

    Alumni

    Graduate Student Year Degree Thesis/Dissertation
    Nathan Vaughn 2016 MS (Non-Thesis MS)
    Zeng Zhang 2015 PhD

    Deep Level Defects in Advanced III-Nitride Semiconductors: Presence, Properties and Impact of Proton Irradiation

    Anup Sasikumar 2014 PhD

    Quantitative spectroscopy of reliability limiting traps in operational gallium nitride based transistors using thermal and optical methods

    Christopher Ratcliff

    2014 PhD

    Growth and Characterization of III-Phosphide Materials and Solar Cells for III-V/Si Photovoltaic Applications

    Emre Cinkilic

    2013 MS

    Comparison of Interface State Spectroscopy Techniques by Characterizing Dielectric – InGaAs Interfaces

    Santosh Hariharan 2013 MS (Non-Thesis MS)

    Andrew M. Carlin

    2012/2010 PhD/MS

    Dissertation: Materials Integration and Metamorphic Substrate Engineering from Si to GaAs to InP for Advanced III-V/Si Photovoltaics

    Thesis: Growth and Strain Relaxation in Anion-Graded GaxIn1-xAsyP1-y

    Krishna Swaminathan

    2012 PhD

    Multi-spectral Photodetectors on GaAs Substrates using Metamorphic Epitaxy and Hybrid III-V Heterostructures

    Mark R. Brenner

    2009 MS

    GaP/Si Heteroepitaxy (Suppression of Nucleation Related Defects)

    Andrew C. Malonis

    2009 MS

    Quantitative defect spectroscopy on operating AlGaN/GaN high electron mobility transistors

    Aaron R. Arehart

    2009 PhD

    Investigation of electrically active defects in GaN, AlGaN, and AlGaN/GaN high electron mobility transistors

    Maria Gonzalez

    2009 PhD

    Electronic Defects of III-V Compound Semiconductor Materials Grown on Metamorphic SiGe Substrates for Photovoltaic Applications

    Yong Lin

    2007 PhD

    Science and applications of III-V graded anion metamorphic buffers on INP substrates

    Katherine L. Dykes

    2007 MS

    Surface Treatment and Characterization of Alloy SiGe in Preparation for MBE Growth Applications

    Andrew M. Armstrong

    2006 PhD

    Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films

    Ojin Kwon

    2005 PhD

    Monolithic integration of III-V optoelectronics on SI

    John J. Boeckl

    2005 PhD

    Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates

    Matthew R. Lueck

    2005 MS

    Impact of Annealing and Flux Ratio on MBE Grown GaInP Materials and Solar Cells

    Carrie L. Andre

    2004 PhD

    III-V semiconductors on SiGe substrates for multi-junction photovoltaics

    Robert J. Kaplar

    2002 PhD

    Characterization of deep-level defects in indium-gallium-arsenic-nitride

    Piyush M. Sinha

    2002 MS

    Electron Transport Properties of MBE Grown InAsP

    John A. Carlin

    2001/2000 PhD/MS Dissertation: 

    Investigation and development of high quality gallium arsenide-on-silicon for space photovoltaics using a graded germanium silicon buffer

    Thesis: Role of Al Content on Surface Roughening and Critical Thickness of Low Temperature AlxGa1-xAs

    Adrian Hierro

    2001 PhD

    Electrical characterization of defects in n-gallium nitride

    Robert M. Sieg

    1998/1994 PhD/MS Dissertation: 

    Critical issues in III-V compound semiconductor epitaxy on group IV (silicon, germanium) substrates for optoelectronic applications

    Thesis: A PL Study of Heavily Doped InP

    Basab Chatterjee

    1997 PhD

    Hydrogen passivation of heteroepitaxial indium phosphide

    William C. Davis

    1997 MS

    Digital Deep Level Transient Spectroscopy: Improved Data Analysis and Semiconductor Device Characterization through Linear Predictive Modeling

    Patrick N. Grillot

    1996/1993 PhD/MS Dissertation: 

    Defects induced by strain-relaxation in heteroepitaxial germanium-silicon alloys

    Thesis: Analysis of the Electronic Properties of Dislocations in Heteroepitaxial Germanium-Silicon

    Rafael A. Mena

    1995 PhD

    Novel measurement techniques for the characterization of advanced HEMT structures for communication applications

           
    Post Doctoral Researchers Years    
    Drew Cardwell 2013-2015    
    Santino Carnevale 2013-2015    
    Javier Grandal 2010-2012    
           
    Visiting Scholars Years    
    Alicia Gonzalo Martin  2016    
    Alejandro Kurtz de Griñó  2014    
    Elisa Garcia-Tabarés 2013    

    Beatriz Galiana-Blanco

    2011-2012    
    Emre Gur 2009-2012    
           
    Undergraduate Students Year   Undergraduate Degree
    Deep Shah 2015   Chemical and Biomolecular Engineering
    Austin Speelman 2012   Electrical and Computer Engineering