Labs/Links

EMDL Facilities

 
Contact: Mark Brenner brenner.34@osu.edu
095 Dreese Lab, 2015 Neil Avenue, Columbus, OH 43210
 
The Semiconductor Epitaxy and Analysis Laboratory (SEAL) is OSU’s primary facility for molecular beam epitaxy (MBE) and is located within the 4,000 square foot Dreese Lab Cleanroom (DLC) and is a core facility that is co-managed by the Ohio State Institute for Materials Research (IMR; imr.osu.edu).  SEAL houses six state of the art MBE chambers, each dedicated to different material systems, to ensure high quality material epitaxy for both basic studies and true device development.  SEAL can provide epitaxial growth of crystalline layers, heterostructures, quantum and nanostructures, and devices ranging from solar cells and infrared photodetectors, to high electron mobility transistors, 2D structures and power devices.
    SEAL started out life as part of Professor Ringel’s EMDL group, when he founded the EMDL MBE (molecular beam epitaxy) lab in 1994, housing the first MBE system in the State of Ohio outside of AFRL. This initial investment was made through OSU’s former Center for Materials Research (CMR) and the Office of the Vice President for Research.  As SEAL grew from this single MBE system in 1000 sqft of space within the ECE Dreese Lab Cleanroom, to 6 MBEs in 2500 sqft, Professor Ringel formally established SEAL as a staffed user facility open to all in 2000. Over time, Professor Ringel incorporated select characterization facilities that support MBE growth into SEAL’s user facility structure.  Over time, and with additional faculty joining the ECE department, the MSE department and the Institute for Materials Research (imr.osu.edu), including Professors Grassman, Krishna, Myers and Rajan, SEAL is now a world-class MBE facility.
     Currently SEAL houses 6 molecular beam epitaxy (MBE) systems: system 1 for III-AsP materials; system 2 for Si-Ge-Sn materials; system 3 is a plasma-assisted MBE chamber for growth of GaN and related materials; system 4 is a PAMBE tool dedicated to Ga2O3 and related materials; system 5 is dedicated to 2D transition metal and group-III chalcogenides; and system 6 is dedicated to III-Sb materials and related compounds. SEAL also houses an array of materials characterization and processing capabilities that support epitaxial growth, including high resolution triple axis XRD, Hall Effect transport measurements (including variable field and temperature analyses), photoluminescence spectroscopy, etc. SEAL is a staffed user based cost center within the college of engineering and the ECE department.  SEAL is also a member of the IMR network of laboratories at OSU which coordinates research activities and infrastructure related to the science and engineering of materials throughout OSU.
 
 
Defect Spectroscopy Laboratories
Contact: Aaron Arehart arehart.5@osu.edu
360 Caldwell Lab, 2024 Neil Ave., Columbus OH 43210
 
This unique, specialized group of laboratories housed in OSU’s Department of Electrical and Computer Engineering is dedicated to the characterization of electrically active deep level defects in semiconductors and is one of the largest such clusters in the world, with 9 total defect spectroscopy measurement systems. The labs, which were established starting in 1991 as EMDL’s first research capability with a single deep level transient spectroscopy (DLTS) system, include complete, state-of-the-art facilities to conduct a variety of capacitance and current-based trap spectroscopies applicable to semiconductor materials, heterostructures and devices. The combination of conventional thermal-emission based DLTS and photocapacitance-based deep level optical spectroscopy (DLOS) facilitates trap characterization abilities for materials having bandgaps up to ~5.5 eV. The additional use of constant capacitance mode and constant current mode DLTS and DLOS allows for trap characterization within a variety of structures, from bulk materials to heterostructures and transistor architectures. Up to 1000V can be applied with our high-voltage DLTS and DLOS system, revealing deep level response during real high voltage transistor operating conditions. Our nano-DLTS systems are capable of detecting localized trap at high lateral spatial resolution, enabling site-specific connections between trap responses and microstructure, throughout the bandgap. The combined facilities allow for characterization of traps from very narrow bandgap (e.g. InAs) to ultrawide bandgap (e.g. AlN and Ga2O3) semiconductors, in applications that include photovoltaics, power electronics, and infrared-visible-ultraviolet photonics.  To date we have significant experience in defect spectroscopy studies on materials and devices that include GaN, AlGaN and other III-Nitrides, GaAs, GaInP, InP, InAs and other III-V compounds including III-V/Si heteroepitaxial structures, SiGe, SiC, Ga2O3, CuInGaSe and other advanced semiconductors.  Our probe stations are configurable to perform measurements on a variety of device structures, such as high electron mobility transistors, light emitting diodes, solar cells, photo-detectors, and metal-insulator-semiconductor capacitors, and fully packaged power electronics.
Major Capabilities include:
Variable temperature probe stations
DC and pulsed I-V and I-V-T
C-V, C-T, C-f, and lighted C-V
capacitance and current-based DLTS
capacitance and current-based DLOS
scanning “nano” DLTS/DLOS
Admittance Spectroscopy
Internal Photoemission
Scanning Kelvin Probe and Atomic Force Microscopy (SKPM, AFM)
Thermally Stimulated Current/Capacitance
 
https://dlc.engineering.osu.edu/
Contact: Mark Brenner brenner.34@osu.edu
095 Dreese Lab, 2015 Neil Avenue, Columbus, OH 43210
 
Processing Cleanrooms for Microfabrication includes 4000 square feet of class 100 and 1000 areas with additional associated laboratory space. There are facilities to process and fabricate silicon integrated circuits and III-V devices, and this capability has been demonstrated by the implementation of circuits in a variety of technologies (MOS, bipolar, FETs, optoelectronics, and photovoltaics). The processing equipment include a Technics Planar Etch II Plasma Reactor for dielectric deposition, hydrogen processing, and etching; CHA 4-Pocket electron beam evaporator; NRC filament evaporator; ellipsometer; DekTak profilomiter; Karl Suss MJB-3 mask aligner; Kasper and Cobilt aligners and associated photolithography equipment; annealing, oxidation and diffusion furnaces; a pulsed laser deposition facility; West Bond wire bonder; Kenworth probe station with Hewlett-Packard 4145; 4-point probe; wet chemical clean benches, etc. In addition to EE faculty, staff and students, the facilities are available to researchers from Physics, Material Science, Chemical Engineering, Chemistry, Mechanical Engineering, Welding Engineering and from outside Ohio State University.
 
 

EMDL Links to Commonly Used Shared Facilities

The Center for Electron Microscopy and Analysis (CEMAS) is a centralized, coordinated imaging facility where traditional boundaries between disciplines are eliminated.
    With one of the largest concentrations of electron and ion beam analytical microscopy instruments in any North American institution, CEMAS brings together multidisciplinary expertise to drive synergy, amplify characterization capabilities, and challenge what is possible in analytical electron microscopy.
Our world-class multidisciplinary approach enables academic and business partners to "see more" than ever before. 
    Our full-service facility - from extensive sample preparation laboratories to image-processing tools and support - allows researchers to carry out their entire microscopy and analysis program at CEMAS. Located in a custom designed facility on The Ohio State University's West Campus, every instrument in the facility meets or exceeds manufacturer performance specifications. 
 
The Nanotech West Lab of Ohio State is the largest nanotechnology user facility in the state of Ohio. Serving both internal (Ohio State) and external users, Nanotech West supports more than 100 research and development projects per year including use many external users, predominantly startup companies in the Ohio region. Nanotech West consists of a 6,000 square foot class 100 cleanroom facility, a 4,000 square foot Biohybrid Laboratory, and other laboratory and office space.
    Nanotech West is staffed by 7 full-time engineers, 2 part-time support engineers, 1 full-time administrator, and additional Associate Staff and engineering and office student interns. Most of the engineering Core Staff have extensive experience in semiconductor or closely related industries.
 
The NanoSystems Laboratory's goal is to provide academic and industrial users with access to advanced material characterization and fabrication tools for research and development applications. NSL is located on the Columbus Campus of The Ohio State University in the Physics Research Building.
    Research capabilities available at NSL include focused ion beam/scanning electron microscopy, e-beam lithography, nanomanipulation, EDS X-ray microanalysis, X-ray diffractometry, SQUID magnetometry, atomic force/magnetic force microscopy, low temperature magnetotransport measurements and Langmuir-Blodgett trough monolayer deposition.