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Defect Spectroscopy

This unique, specialized laboratory is dedicated to the characterization of electrically active deep level defects in semiconductors. The lab houses complete, state-of-the-art facilities to conduct a variety of capacitance and current-based trap spectroscopies applicable to semiconductor materials, structures and devices. The combination of conventional deep level transient spectroscopy (DLTS) and photocapacitance-based deep level optical spectroscopy (DLOS) facilitates trap characterization abilities for materials having bandgaps up to ~5.5 eV. The additional use of constant capacitance mode and constant current mode DLTS and DLOS allows for trap characterization within a variety of structures, from bulk materials to heterostructures and transistor architectures. Up to 600V can be applied with our high-voltage DLTS and DLOS system, revealing deep level response during real transistor operating conditions. Our nano-DLTS system is capable of detecting localized trap responses and can map locations of deep levels within a material. The combined facilities allow for characterization of a range of materials, including III-Nitrides, III-V, SiGe, SiC, oxides, and other advanced semiconductors in a variety of device structures, such as high electron mobility transistors, light emitting diodes, solar cells, photo-detectors, and metal-insulator-semiconductor capacitors.

 

Major Facilities:

 

  • Variable temperature probe stations

  • DC and pulsed I-V and I-V-T

  • C-V, C-T, C-f, and lighted C-V

  • Deep level transient spectroscopy (DLTS)

  • Deep level optical spectroscopy (DLOS)

  • Internal Photoemission

  • Scanning Kelvin Probe Microscopy (SKPM)

  • Atomic Force Microscopy (AFM)

  • Nano-DLTS/DLOS

  • Isothermal transient analysis

  • Thermally Stimulated Current/Capacitance

  • Admittance Spectroscopy